Agus Ismangil, Teguh Puja Negara


One of the studies that recently attracted the attention of physicists is research on ferroelectric material because this material is very promising for the development of new generation devices in connection with the unique properties it has. Ferroelectric materials, especially those based on a mixture of lithium tantalite (LiTaO3), are expected to be applied to the infrared sensor. Lithium tantalate (LiTaO3) is a ferroelectric material that is unique in terms of pyroelectric and piezoelectric properties that are integrated with good mechanical and chemical stability. Therefore LiTaO3 is often used for several applications such as electro-optical modulators and pyroelectric detectors. LiTaO3 is a non-hygroscopic crystal, colorless, soluble in water, has a high transmission rate and does not easily damage its optical properties. LiTaO3 is a material that has a high dielectric constant and a high load storage capacity. This research has succeeded in determining the band gap energy of the LiTaO3 film in the rubidium chamber obtained in the range of values 2.02-2.98 eV as shown in figure 4. The LiTaO3 film after the annealing process at a temperature of 650 oC, has the highest band gap energy of 2.98 eV. Large energy is needed on the electrons to be excited from the valence band to the conduction band. Whereas in the LiTaO3 film after an annealing process of 800 oC, the band gap energy obtained is 2.02 eV. This makes it easier for electrons to be excited from the valence band to the conduction band because the energy needed is not too large.


absorbance; energy gap; Lithium Tantalate; LiTaO3

Full Text:



[1] Irzaman, A. Fuad, and M. Barmawi. 2001. Spectral Response of Al/Si Photodiodes for IR Sensor. Proceeding Instrumentation, Measurement, and Communications for the Future, Indonesian German Conference (IGC), Bandung: 340 342.

[2] Sutrisno. 1986. Elektronika Teori dan Penerapannya. Bandung: Institut Teknologi Bandung.

[3] Seo, J.Y, Park S.W. 2004. Chemical Mechanical Planarization Characteristic of Ferroelectric Film for FRAM Applications. International Journal of Korean Physics society 45: 769-772.

[4] Irzaman, Maddu A, Syafutra H dan Ismangil A. 2010. Uji konduktivitas listrik dan dielektrik film tipis lithium tantalate (LiTaO3) yang didadah niobium pentaoksida (Nb2O5) menggunakan metode chemical solution deposition. Prosiding Seminar Nasional Fisika, Bandung: 175-183.

[5] Uchino K. 2000. Ferroelectric Devices. New York: Marcel Dekker, Inc.

[6] Saito, T, I. 1996. Kimia Anorganik. Permiission of Iwanami Shaten Publisher.

[7] Malvino A V. 1990. Prinsip-prinsip Elektronika. Jakarta: Salemba Teknika.

[8] Paula M.V, Nathalie B, Sebastian Z, Pedro F, Maria H.F. 2014. Are lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) ferroelectrics bioactive. Journal Materials Science and Engineering 39:395-402.

[9] Irzaman, Darvina Y, Fuad A, Arifin P, Budiman M dan Barmawi M. 2003. Physical and pyroelectric properties of tantalum oxide doped lead zirconium titanate [Pb0.9950 (Zr0.525 Ti0.465 Ta0.010) O3] thin films and its applications for IR sensor. Physica Status Solidi (a) Germany 199: 416-424.

[10] Kwok, K. N. 1995.Complete Guide to Semiconductor Device. McGraw-Hill, inc. Liu X. 2005. Nanoscale chemical ething of near-stoichiometric lithium tantalite.Journal Material sains 97(1):30-38.



  • There are currently no refbacks.